d d ata sheet product specification september 1997 discrete semiconductors bt300s series thyristors
semiconductors product specification thyristors bt300s series bt300m series general description quick reference data glass passivated thyristors in a plastic symbol parameter max. max. max. unit envelope, suitable for surface mounting, intended for use in bt300s (or bt300m) - 500r 600r 800r applications requiring high v drm , repetitive peak off-state 500 600 800 v bidirectional blocking voltage v rrm voltages capability and high thermal cycling i t(av) average on-state current 5 5 5 a performance. typical applications i t(rms) rms on-state current 8 8 8 a include motor control, industrial and i tsm non-repetitive peak on-state 65 65 65 a domestic lighting, heating and static current switching. pinning - sot428 pin configuration symbol pin standard alternative number s m 1 cathode gate 2 anode anode 3 gate cathode tab anode anode limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500r -600r -800r v drm , v rrm repetitive peak off-state - 500 1 600 1 800 v voltages i t(av) average on-state current half sine wave; t mb 107 ?c - 5 a i t(rms) rms on-state current all conduction angles - 8 a i tsm non-repetitive peak half sine wave; t j = 25 ?c prior to on-state current surge t = 10 ms - 65 a t = 8.3 ms - 71 a i 2 ti 2 t for fusing t = 10 ms - 21 a 2 s di t /dt repetitive rate of rise of i tm = 10 a; i g = 50 ma; - 50 a/s on-state current after di g /dt = 50 ma/s triggering i gm peak gate current - 2 a v gm peak gate voltage - 5 v v rgm peak reverse gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature 1 2 3 tab ak g 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the thyristor may switch to the on-state. the rate of rise of current should not exceed 15 a/ s. september 1997 1 rev 1.100
semiconductors product specification thyristors bt300s series bt300m series thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance - - 2.2 k/w junction to mounting base r th j-a thermal resistance pcb (fr4) mounted; footprint as in fig.14 - 75 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit i gt gate trigger current v d = 12 v; i t = 0.1 a - 2 15 ma i l latching current v d = 12 v; i gt = 0.1 a - 10 40 ma i h holding current v d = 12 v; i gt = 0.1 a - 10 20 ma v t on-state voltage i t = 12 a - 1.35 1.6 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.6 1.5 v v d = v drm(max) ; i t = 0.1 a; t j = 125 ?c 0.25 0.4 - v i d , i r off-state leakage current v d = v drm(max) ; v r = v rrm(max) ; t j = 125 ?c - 0.1 0.5 ma dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit dv d /dt critical rate of rise of v dm = 67% v drm(max) ; t j = 125 ?c; off-state voltage exponential waveform. gate open circuit 50 100 - v/ s r gk = 100 200 1000 - v/ s t gt gate controlled turn-on i tm = 10 a; v d = v drm(max) ; i g = 0.1 a; - 2 - s time di g /dt = 5 a/s t q circuit commutated v d = 67% v drm(max) ; t j = 125 ?c; - 70 - s turn-off time i tm = 12 a; v r = 25 v; di tm /dt = 30 a/s; dv d /dt = 50 v/s; r gk = 100 september 1997 2 rev 1.100
semiconductors product specification thyristors bt300s series bt300m series fig.1. maximum on-state dissipation, p tot , versus average on-state current, i t(av) , where a = form factor = i t(rms) / i t(av) . fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 10ms. fig.3. maximum permissible rms current i t(rms) , versus mounting base temperature t mb . fig.4. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t mb 107?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0123456 a = 1.57 1.9 2.2 2.8 4 it(av) / a ptot / w tmb(max) / c 0 8 4 6 2 125 111 118 121.5 114.5 bt300 conduction angle form factor degrees 30 60 90 120 180 4 2.8 2.2 1.9 1.57 a bt300 1 10 100 1000 number of half cycles at 50hz itsm / a 0 10 20 30 40 50 60 70 t i tsm time i t tj initial = 25 c max 10 100 1000 bt300 10us 100us 1ms 10ms t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t 0.01 0.1 1 10 0 4 8 12 16 20 24 bt150 surge duration / s it(rms) / a -50 0 50 100 150 0 1 2 3 4 5 6 7 8 9 bt300s tmb / c it(rms) / a 107 c -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt151 tj / c vgt(tj) vgt(25 c) september 1997 3 rev 1.100
semiconductors product specification thyristors bt300s series bt300m series fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-mb , versus pulse width t p . fig.12. typical, critical rate of rise of off-state voltage, dv d /dt versus junction temperature t j . -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt150 tj / c igt(tj) igt(25 c) 0 0.5 1 1.5 2 0 5 10 15 20 25 30 typ vt / v it / a max tj = 125 c tj = 25 c vo = 1.21 v rs = 0.0313 ohms bt300 -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt150 tj / c il(tj) il(25 c) 10us 0.1ms 1ms 10ms 0.1s 1s 10s 0.01 0.1 1 10 bt150 tp / s zth j-mb (k/w) t p p t d -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt150 tj / c ih(tj) ih(25 c) 0 50 100 150 10 100 1000 10000 tj / c dvd/dt (v/us) gate open circuit rgk = 100 ohms september 1997 4 rev 1.100
semiconductors product specification thyristors bt300s series bt300m series mechanical data dimensions in mm net mass: 1.1 g fig.13. sot428 : centre pin connected to tab. mounting instructions dimensions in mm fig.14. sot428 : minimum pad sizes for surface mounting . notes 1. plastic meets ul94 v0 at 1/8". 6.22 max 2.38 max 0.93 max 6.73 max 0.3 10.4 max 0.5 0.8 max (x2) 2.285 (x2) 0.5 seating plane 1.1 0.5 min 5.4 4 min 4.6 1 2 3 tab 7.0 7.0 2.15 2.5 4.57 1.5 september 1997 5 rev 1.100
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